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Sputtering targets, evaporation materials and high purity alloys for research and development.
Forniamo materiali per evaporazione e targets per la deposizione di film sottili in diverse forme e purezze. Il tipico range di purezza č compreso tra 99,9% e 99,9999%. Le forme includono pezzi, granuli, targets, fili, pellets, barre, polveri e fogli. I targets sono disponibili anche con backing plates saldate con indio o con colla epossidica a base di argento. Scarica il Catalogo PDF dei Materiali di Deposizione e se non trovi il prodotto che stai cercando per forma, dimensioni o purezza, contattaci. Di seguito un elenco sommario dei materiali che possiamo fornire: |
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Aluminum, Al Antimony, Sb Barium, Ba Berylium, Be Bismuth, Bi Boron, B Cadmium, Cd Calcium, Ca Carbon, C Cerium, Ce Chromium, Cr Cobalt, Co Copper, Cu Dysprosium, Dy Erbium, Er |
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Europium, Eu Gadolinium, Gd Germanium, Ge Gold, Au Hafnium, Hf Holmium, Ho Indium, In Iridium, Ir Iron, Fe Lanthanum, La Lead, Pb Lithium, Li Lutetium, Lu Magnesium, Mg Manganese, Mn |
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Molybdenum, Mo Neodymium, Nd Nickel, Ni Niobium, Nb Osmium, Os Palladium, Pd Platinum, Pt Praseodymium, Pr Rhenium, Re Rhodium, Rh Ruthenium, Ru Samarium, Sm Scandium, Sc Selenium, Se Silicon, Si |
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Silver, Ag Strontium, Sr Tantalum, Ta Tellurium, Te Terbium, Tb Thulium, Tm Tin, Sn Titanium, Ti Tungsten, W Vanadium, V Ytterbium, Yb Yttrium, Y Zinc, Zn Zirconium, Zr
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Metals |
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Alumel, Ni/Al/Si/Mn Aluminum Copper, Al/Cu Aluminum Nickel Silicon Aluminum Nickel, Al/Ni Aluminum Silicon Copper Aluminum Silicon, Al/Si Aluminum Titanium, Al/Ti Chromel, Ni/Cr/Si/Fe Chromium Aluminum |
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Chromium Molybdenum Chromium/SiO (Cermets) Copper Chromium, Cu/Cr Gold Germanium, Au/Ge Gold Tin, Au/Sn Gold Zinc, Au/Zn Inconel, Ni/Cr/Fe Indium Tin, In/Sn Iridium Manganese, Ir/Mn |
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Iron Cobalt, Fe/Co Iron Manganese, Fe/Mn Iron Tantalum, Fe/Ta Nickel Chrome, Ni/Cr Nickel Titanium, Ni/Ti Nickel Vanadium, Ni/V Osmium Ruthenium Permalloy, Ni/Fe Platinum Manganese |
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Platinum Ruthenium Samarium Cobalt Silicon Iron Aluminum Silicon Aluminum, Si/Al Silicon Germanium, Si/Ge Tantalum Aluminum, Ta/Al Tungsten 10% Titanium Tungsten 15% Titanium Zinc Aluminum, Zn/Al
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Alloys/Intermetallics |
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Aluminum Oxide Antimony Oxide Antimony Tin Oxide, ATO Barium Carbonate Barium Oxide Barium Strontium Titanate Barium Titanate Bismuth Oxide Bismuth Titanate Cadmium Oxide Cadmium Stannate Cerium Oxide Chromium Oxide Copper Oxide |
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Gallium Oxide Germanium Oxide Hafnium Oxide Indium Oxide Indium Tin Oxide, ITO Lanthanum Aluminate Lanthanum Oxide Lead Tantalate Lead Titanate Lead Zirconate Lead Zirconium Titanate Lithium Carbonate Lithium Niobate Lithium Oxide |
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Lithium Phosphate Magnesium Oxide Mixed Oxide Molybdenum Oxide Niobium Oxide Niobium Pentoxide Potassium Carbonate Rare Earth Oxide Ruthenium Oxide Scandium Oxide Silicon Dioxide Silicon Monoxide Strontium Oxide Strontium Ruthenate |
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Strontium Titanate Strontium Zirconate Superconductor Tantalum Pentoxide Tellurium Oxide Tin Oxide Titanium Oxide Tungsten Oxide Vanadium Oxide YBCO Yttrium Oxide Zinc Aluminum Oxide Zinc Oxide Zirconium Oxide |
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Oxides |
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Chromium Boride Hafnium Boride Iron Boride |
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Lanthanum Boride Magnesium Boride Molybdenum Boride |
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Niobium Boride Tantalum Boride Titanium Boride |
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Tungsten Boride Vanadium Boride Zirconium Boride |
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Borides |
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Boron Carbide Chromium Carbide Hafnium Carbide |
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Molybdenum Carbide Niobium Carbide Silicon Carbide |
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Tantalum Carbide Titanium Carbide Tungsten Carbide |
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Tungsten Carbide-Cobalt Vanadium Carbide Zirconium Carbide |
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Carbides |
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Aluminum Fluoride Barium Fluoride Calcium Fluoride Cerium Fluoride Cesium Fluoride Europium Fluoride |
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Gadolinium Fluoride Lanthanum Fluoride Lead Fluoride Lithium Fluoride Magnesium Fluoride Neodymium Fluoride |
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Potassium Fluoride Praseodymium Fluoride Samarium Fluoride Sodium Aluminum Fluor. Sodium Fluoride Strontium Fluoride |
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Terbium Fluoride Thorium Fluoride Thullium Fluoride Ytterbium Fluoride Yttrium Fluoride |
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Fluorides |
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Nitrides |
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Aluminum Nitride Boron Nitride Chromium Nitride |
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Gallium Nitride Hafnium Nitride Niobium Nitride |
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Silicon Nitride Electronic Silicon Nitride Technical Tantalum Nitride |
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Titanium Nitride Vanadium Nitride Zirconium Nitride |
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Chromium Silicide Cobalt Silicide Hafnium Silicide |
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Manganese Silicide Molybdenum Silicide Niobium Silicide |
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Platinum Silicide Tantalum Silicide Titanium Silicide |
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Tungsten Silicide Vanadium Silicide Zirconium Silicide |
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Silicides |
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Sulfides, Selenides, Tellurides |
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Antimony Selenide Antimony Telluride Arsenic Sulfide Bismuth Selenide Bismuth Telluride Cadmium Selenide Cadmium Sulfide Cadmium Telluride |
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Europium Sulfide Gadolinium Sulfide Germanium Selenide Germanium Sulfide Germanium Telluride Indium Selenide Lead Selenide Lead Sulfide |
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Lead Telluride Molybdenum Selenide Molybdenum Sulfide Molybdenum Telluride Niobium Selenide Niobium Sulfide Niobium Telluride Tantalum Selenide |
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Tantalum Sulfide Tantalum Telluride Tungsten Selenide Tungsten Sulfide Tungsten Telluride Zinc Selenide Zinc Sulfide Zinc Telluride |
Sputter deposition
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Sputter deposition is a physical vapor deposition (PVD) method of depositing thin films by sputtering, that is ejecting, material from a "target," that is source, which then deposits onto a "substrate," such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100000 K). The sputtered ions (typically only a small fraction — order 1% — of the ejected particles are ionized) can ballistically fly from the target in straight lines and impact energetically on the substrates or vacuum chamber (causing resputtering). Alternatively, at higher gas pressures, the ions collide with the gas atoms that act as a moderator and move diffusively, reaching the substrates or vacuum chamber wall and condensing after undergoing a random walk. The entire range from high-energy ballistic impact to low-energy thermalized motion is accessible by changing the background gas pressure. The sputtering gas is often an inert gas such as argon. For efficient momentum transfer, the atomic weight of the sputtering gas should be close to the atomic weight of the target, so for sputtering light elements neon is preferable, while for heavy elements krypton or xenon are used. Reactive gases can also be used to sputter compounds. The compound can be formed on the target surface, in-flight or on the substrate depending on the process parameters. The availability of many parameters that control sputter deposition make it a complex process, but also allow experts a large degree of control over the growth and microstructure of the film. |